| PART |
Description |
Maker |
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| NRC50J100TR |
RES,TF,SMD,2010,10 OHM,1/2W,5% SEI RMC 1/2 10 5%;KOA RM73B2HTE100J RESISTOR, METAL GLAZE/THICK FILM, 0.75 W, 5 %, 250 ppm, 10 ohm, SURFACE MOUNT, 2010
|
NIC Components, Corp.
|
| SIHF644S-E3 |
14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| RFP-250-200RM RFP-250-100RM-S |
Flanged Resistors 250 Watts, 200 ohm
|
Anaren Microwave
|
| RJK2557DPA-00-J0 |
17 A, 250 V, 0.128 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| STB16NB25T4 |
16 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| SIHFR9214T-E3 |
2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
VISHAY SILICONIX
|
| SUM18N25-165-E3 |
18 A, 250 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| SIHFP254N-E3 |
23 A, 250 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
VISHAY SILICONIX
|
| 3404.2420.XX 3404.2417.XX 3404.2412.XX 3404.2413.X |
Surface Mount Fuse with Clip, 11.1 x 3.8 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| HVP1007057FB HVP1007057GB HVP1007057JB HVP1007057K |
Ultra High Voltage Resistors Up to 5 Gig ohm, 250 Watt and 300 KV DC
|
American Accurate Components, Inc.
|
|
